2019-09-03 11:35

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　　大家好，我叫宋庸鎬，是三星电子 / 应用技术部的高级副总裁，很荣幸今天来到ODCC / 跟大家交流。

　　我现在很努力学习中文，但我的水平还是像小孩子，所以从这里开始 / 用英语发表，请多多包涵。

　　Good morning, everyone! I am happy to be here and have a chance to give a talk at this important event.

　　These days we see the fast growth of computation and communication technologies. Many devices that we are using everyday create more and more data. I am going to talk about Samsung’s preparation for the upcoming data centric world.

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　　Wow, it looks so complicated!

　　Now I believe you read all these.

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　　Today this presentation has three parts: Industry Trend, Memory Solution and Storage Solution.

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　　Let me start with the megatrends we can see in the ICT industry today.

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　　So far there have been the big technology advance in storing, processing, transferring data, and making brand-new applications.

　　These advances make it possible to develop data centers to support cloud computing, smart applications based on AI technology, fast communication using 5G network, and autonomous driving based on all of these.

　　However, to enable these new applications, we need to have innovative core technologies. For example, intelligent near-data processing can be used to support the big data analysis in data center.

　　And to increase the computation efficiency, we are now using special processors like GPGPU, NPU and TPU, as well as hardwired accelerators using an FPGA.

　　Moreover, the use of fast network enables more devices to be connected to each other, and also storage systems can be scaled out for higher capacity.

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　　We also see the new applications are giving new memory performance requirement which is higher than ever. It is shown as the white color line.

　　But the memory BW we can actually provide is quite low, as shown in the blue line, which lags behind the requirement with an even larger gap.

　　To overcome this gap, we can increase the number of channels and per-pin speed in memory interface. But this seems to be not enough for the future.

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　　One of the reasons that there is an increasing gap in memory bandwidth is because the way applications use data has been changed.

　　In the old application-centric era, data was often connected to a particular application separately.

　　But now, more data is generated from more applications and transferred faster than before, which drives the emergence of data centric world.

　　It will increase the processing time and energy consumption if we don’t change our approach.

　　To process the data more efficiently and faster, we are now moving to a memory-centric world, meaning more memory & storage to be used for processing.

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　　The megatrends that are mentioned earlier also come with different requirements in memory device and solution designs. 

　　First, one size can’t fit all.  Memory is becoming more tailored to specific applications to meet their various requirements.

　　And second, the memory hierarchy is more diversified, and we need to fill the gap between existing memory/storage devices, using performance SSDs and capacity SSDs.

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　　With all of this as background, I would like to introduce how Samsung is meeting this shift with our latest memory solutions.

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　　Data centers are continually pushing toward greater server utilization by using virtual machines. With more VMs running on a given server, DRAM performance and capacity must increase accordingly. 

　　Computing acceleration is also gaining adoption in the market, such as FPGA and GPU, with the key requirement being higher bandwidth. Our HBM2 product is a great fit to meet this requirement.

　　Moreover, DRAM is becoming a more and more important component that can affect the availability of datacenter services (five Nines). We are also considering to develop the next generation ECC for DRAM.

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　　As our era changed from PC to Mobile to Datacenter and now to AI, our DRAM product lineups had been enriched to meet different requirements.

　　For example, In Mobile era we have low power solution LPDDR,

　　In DC era, we have high capacity solution such as up to 256GB DDR4.

　　Now In AI era, we bring the industry’s breakthrough solution HBM2 to meet the high bandwidth requirement.

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　　Here is an overview of our products to address the DRAM diversification.

　　Our HBM2 product can provide over 1 TB/s of memory bandwidth with a compact and power efficient form factor.

　　For high speed applications, we have GDDR6 which achieves 18Gbps and up to 864 GB/s of memory bandwidth.

　　Third, LPDDR5 has 40% power reduction compared to our previous generation LPDDR4, and still delivers over 50GB/s of bandwidth. 

　　Lastly, DDR4 memory has a density of up to 256GB to align with our customers’ high capacity requirements.

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　　In the next part, let us move to see how we make our storage solutions to meet the diversity of customers’ needs.

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　　In the picture shown here, across these different eras, we see there are many solution products in our portfolio.

　　From PC to DC era, we have been using faster interfaces (such as NVMe and SAS) to meet storage performance requirements. We also developed TLC and QLC SSD for higher density for datacenters.

　　Entering the AI era, for high performance servers we have Z-SSD and SmartSSD. I will explain these in detail from now on.

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　　Here are a few examples of our solution products including PCIe Gen4 SSD, Z-SSD, QLC SSD and Next Generation solutions. Let us go through our new products one by one.

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　　First, PCIe Gen4 SSD. Samsung is the first SSD vendor to co-validate it in the AMD Rome platform and we are actively promoting it in China.

　　We are also the 1st company to validate PCIe Gen4 SSD in ODCC.

　　The performance chart shows that the performance is almost doubled for both 128k sequential read and write.

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　　Next let us have a look at the memory hierarchy and how our ZSSD and QLC SSD fit into the gap. ZSSD is made with our proprietary ZNAND devices, which provides ultra low latency and great endurance compared to normal TLC SSDs.

　　Therefore, we believe that ZSSD can sit between conventional DRAM and normal storage, as an optimized and economical solution. Actually it can be used to implement a hot data cache.

　　Between HDD and TLC SSD, we can put another storage layer that can provide competitive performance with a large capacity.

　　For this reason, we developed our QLC SSD to fit into this gap and to serve as a warm storage tier.

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　　Next, we have Smart SSD, which is also known as FPGA-SSD. It uses an FPGA device inside the SSD for data service acceleration.

　　Especially in data centric world, data transformation normally proceeds together with extra data services such as encryption, compression, and others.

　　Fixed repeated functions bring a burden to CPU and can be a bottleneck of the system. To solve this problem, the FPGA provides acceleration that can process these fixed functions more efficiently than CPU, thus increasing the total system performance and saving energy consumption.

　　By integrating an FPGA in an SSD we can unlock its potential to provide more diversified functions to optimize system operation. We’d like to work with the industry to explore its great potential together.

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　　Next is open channel SSD. The major difference from traditional SSDs is that the flash translation layer is moved to the host side from the SSD,

　　It means the logical address to physical address translation is controlled by host. This technology is required by some of our Chinese customers. Theoretically it can enable the customer to manage the SSD QoS more flexibly, reduce the write amplification factor, and decrease the over provisioning overhead.

　　This is some innovative work that has never been done before. We’d like to cooperate with customers together to overcome any other difficulties.

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　　In today’s datacenter, Virtual machines(VM) are more and more popular.

　　Data with different lifetime or applications with different workload characteristics may use the same SSD device (For example, a word document requires many more “updates”,  in our technical terms “rewrites”, than picture data)

　　ZNS(Zoned namespaces) can divide an SSD into a number of different spaces by their types, which can reduce garbage collection, reduce storage cost and provide steady performance even in a multi-tenants environment.

　　This innovative technology is now under standardization and we are one of the key contributors. I hope we can bring a product with this feature to our customers as soon as possible in the near future.

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　　ODCC is the leading organization in the memory industry in China that provides us the platform to work together to develop great solutions.

　　We will continue to closely work with ODCC to develop new technologies such as OpenMPDK, KVSSD, ZNS, etc.

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　　As a summary of my keynote, here are three messages I’d like to share again:

　　1. The data centric world has come and requires us to develop higher performance and more diversified memory products.

　　2. We have prepared and will continue to develop better solutions to meet the new requirements of the data centric world.

　　3. Our own effort will never be enough, and it will be our pleasure to work together with Chinese customers and partners to develop better services, better platforms, and better storage systems.

　　最后，再次感谢大家！我会继续 / 努力学习中文，希望下次 / 有机会用中文和大家交流。祝各位身体健康，家庭幸福美满。